TIP31C is a silicon NPN power transistor with an island base. It belongs to the TIP31 series and housed in a TO-220 package suitable for midium-power tasks like switching applications and power amplifications.
It can handle up to 100V for collector-base and collector-emitter voltages, with a maximum collector current of 3A. The emitter-base voltage is 5V, and this transistor can dissipate up to 40W of power. With a minimum Beta (β) of 10, the TIP31C transistor ensures reliable performance across various applications at different currents and voltages.
The quick technical specifications and features of the tip31c transistor are given below:
| Transistor Type | NPN |
| Material of Transistor | Si |
| Collector Current (Ic) | 3A |
| Collector-Base Voltage (Vcb) | 100V |
| Collector-Emitter Voltage (Vce) | 100V |
| Emitter-Base Voltage (Veb) | 5V |
| Transition Frequency (ft) | 3MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Collector Power Dissipation (Pc) | 40W |
| Operating Junction Temperature (Tj) | -65°C ~ 150° |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Base Product Number | TIP31C |
The pin configuration of the TIP31C transistor is as follows:
| Pin No. | Name | Description |
|---|---|---|
| 1 | Base | Controls the biasing of the transistor. |
| 2 | Collector | Electrons Emitted from Emitter Collected by the Collector. |
| 3 | Emitter | Electrons emitted from the emitter into the first PN. |
If you are designing a PCB or perf board with this component, the following picture from the TIP31C datasheet will be useful to determine its package type and dimensions.
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