The BD139 is a silicon NPN power transistor with an epitaxial base. It belongs to the BD series and housed in a TO-126 package suitable for Medium-power tasks like switching applications and power amplifications.
It can handle up to 80V for collector-base and collector-emitter voltages, with a maximum collector current of 1.5A. The emitter-base voltage is 5V, and this transistor can dissipate up to 12.5W of power. With a minimum Beta (β) of 40, the BD139 transistor ensures reliable performance across various applications at different currents and voltages.
The quick technical specifications and features of the bd139 transistor are given below:
| Transistor Type | NPN |
| Material of Transistor | Si |
| Collector Current (Ic) | 1.5A |
| Collector-Base Voltage (Vcb) | 80V |
| Collector-Emitter Voltage (Vce) | 80V |
| Emitter-Base Voltage (Veb) | 5V |
| Transition Frequency (ft) | 50MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Collector Power Dissipation (Pc) | 12.5W |
| Operating Junction Temperature (Tj) | -55°C ~ 150°C |
| Package / Case | TO-126-3 |
| Mounting Type | Through Hole |
| Base Product Number | BD139 |
The pin configuration of the BD139 transistor is as follows:
| Pin No. | Name | Description |
|---|---|---|
| 1 | Emitter | Electrons emitted from the emitter into the first PN. |
| 2 | Collector | Electrons Emitted from Emitter Collected by the Collector. |
| 3 | Base | Controls the biasing of the transistor. |
If you are designing a PCB or perf board with this component, the following picture from the BD139 datasheet will be useful to determine its package type and dimensions.
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